86-13826519287
1968195384@qq.com
中文
EN
产品
本地分类(7)
未分类(68034)
未分类(68034)
电缆组件(484842)
模块化电缆(40571)
盒子、外壳、架子(62754)
盒子(15753)
套件(19445)
各种各样的(221)
传感器套件(190)
音频套件(41)
开发板、套件、编程器(64967)
评估板(52653)
创客/DIY、教育(2717)
教育套件(1376)
品牌
询价
行业资讯
industry news
关于我们
企业文化
公司介绍
服务项目
联系我们
联系我们
中文
EN
首页
产品
品牌
询价
行业资讯
关于我们
联系我们
创客/DIY、教育
书籍、媒体
GAN POWER DEVICES AND APPLICATIONS 1ST ED
GAN POWER DEVICES AND APPLICATIONS 1ST ED
:
GAN POWER DEVICES AND APPLICATIONS 1ST ED
:
书籍、媒体
:
EPC
:
TEXT GAN POWER
:
-
:
盒子
:
110
:
1
:
110
1
$108.0000
$108.0000
获取报价信息
GAN HEMT
NULL
射频器件-射频晶体管-GAN HEMT
氮化镓GaN
NULL
SiC/GaN-氮化镓GaN
GAN063-650WSA
安世-Nexperia
650 V、50 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN190-650EBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN080-650EBE
安世-Nexperia
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN039-650NTBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN7R0-150LBE
安世-Nexperia
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
GAN190-650FBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN140-650EBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140-650FBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN039-650NTB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN039-650NBBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN041-650WSB
安世-Nexperia
650 V、35 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN039-650NBB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN3R2-100CBE
安世-Nexperia
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
GAN65R150
银河微-Galaxy
10A, 650V, N Channel, Small Signal MOSFETs
gANZ0017
Gotmic
Amplifiers
gANZ0032
Gotmic
Amplifiers
gANZ0012
Gotmic
Amplifiers
gANZ0033
Gotmic
Amplifiers
gANZ0031
Gotmic
Amplifiers
GAN-2A-12DG2
高登-Golden
功率继电器
GAN-H
高登-Golden
功率继电器
BM12N60GAN
明月-MingYue
MOS芯片
BM10N65GAN
明月-MingYue
MOS芯片
BM12N65GAN
明月-MingYue
MOS芯片
BM10N60GAN
明月-MingYue
MOS芯片
ZHL-100W-GAN
Mini-Circuits
Coaxial High Power Amplifier
R5F11AGGANB
瑞萨-Renesas
Bluetooth® Low Energy Microcontrollers for Smart Connectivity
MASTERGAN2
意法-ST
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
R5F104EGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN1
意法-ST
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
R5F101BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F104BGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN3
意法-ST
High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
MASTERGAN5
意法-ST
High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
MASTERGAN1L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
VIPERGAN100
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
MASTERGAN4L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
R5F104GGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN4
意法-ST
High power density 600V half bridge driver with two enhancement mode GaN power HEMT
R5F100EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
VIPERGAN65
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
VIPERGAN50
意法-ST
嵌入高压转换器的高级准谐振控制器和650V GAN HEMT
R5F100BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F100GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
ZHL-50W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
ZHL-100W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
产品参数
PDF(1)
类型
描述
制造商
EPC
系列
-
包裹
盒子
产品状态
ACTIVE
类型
Book
标题
GaN Power Devices and Applications
作者
Alex Lidow
出版商
J.Wiley
关闭
询价
购买数量
:
目标价格
:
联系人姓名
:
公司名称
*
邮箱
:
*
联系人手机
验证码
提交
86-13826519287
1968195384@qq.com
0