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GAN POWER DEVICES AND APPLICATIONS 1ST ED

  •  GAN POWER DEVICES AND APPLICATIONS 1ST ED
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GAN POWER DEVICES AND APPLICATIONS 1ST ED
书籍、媒体
EPC
TEXT GAN POWER
-
盒子
110
1
: 110

1

$108.0000

$108.0000

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GAN HEMT
NULL
射频器件-射频晶体管-GAN HEMT
氮化镓GaN
NULL
SiC/GaN-氮化镓GaN
GAN063-650WSA
安世-Nexperia
650 V、50 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN190-650EBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN080-650EBE
安世-Nexperia
650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN039-650NTBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN7R0-150LBE
安世-Nexperia
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package
GAN190-650FBE
安世-Nexperia
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN140-650EBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm package
GAN140-650FBE
安世-Nexperia
650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm package
GAN039-650NTB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212i封装
GAN039-650NBBA
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN041-650WSB
安世-Nexperia
650 V、35 mΩ氮化镓(GaN) FET,采用TO-247封装
GAN039-650NBB
安世-Nexperia
650 V、33 mΩ氮化镓(GaN) FET,采用CCPAK1212封装
GAN3R2-100CBE
安世-Nexperia
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)
GAN65R150
银河微-Galaxy
10A, 650V, N Channel, Small Signal MOSFETs
gANZ0017
Gotmic
Amplifiers
gANZ0032
Gotmic
Amplifiers
gANZ0012
Gotmic
Amplifiers
gANZ0033
Gotmic
Amplifiers
gANZ0031
Gotmic
Amplifiers
GAN-2A-12DG2
高登-Golden
功率继电器
GAN-H
高登-Golden
功率继电器
BM12N60GAN
明月-MingYue
MOS芯片
BM10N65GAN
明月-MingYue
MOS芯片
BM12N65GAN
明月-MingYue
MOS芯片
BM10N60GAN
明月-MingYue
MOS芯片
ZHL-100W-GAN
Mini-Circuits
Coaxial High Power Amplifier
R5F11AGGANB
瑞萨-Renesas
Bluetooth® Low Energy Microcontrollers for Smart Connectivity
MASTERGAN2
意法-ST
High power density 600V Half bridge driver with two enhancement mode GaN HEMT
R5F104EGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN1
意法-ST
High power density half-bridge high voltage driver with two 650V enhancement mode GaN HEMT
R5F101BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F104BGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN3
意法-ST
High power density 600 V Half bridge driver with two enhancement mode GaN HEMTs
MASTERGAN5
意法-ST
High power density 600 V half-bridge driver with two enhancement mode GaN power HEMTs
MASTERGAN1L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
VIPERGAN100
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
MASTERGAN4L
意法-ST
600 V half-bridge enhancement mode GaN HEMT with high voltage driver
R5F104GGANA
瑞萨-Renesas
Low Power, High Function, General Purpose Microcontrollers for Motor Control, Industrial and Metering Applications
MASTERGAN4
意法-ST
High power density 600V half bridge driver with two enhancement mode GaN power HEMT
R5F100EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
VIPERGAN65
意法-ST
采用增强模式GaN HEMT的高级准谐振离线高压变换器
VIPERGAN50
意法-ST
嵌入高压转换器的高级准谐振控制器和650V GAN HEMT
R5F100BGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101EGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F100GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
R5F101GGANA
瑞萨-Renesas
Low Power, High Function Microcontrollers for General Purpose Applications
ZHL-50W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
ZHL-100W-GAN+
Mini-Circuits
High Power Amplifier, 20 - 500 MHz, 50Ω
产品参数
PDF(1)
类型描述
制造商EPC
系列-
包装盒子
产品状态ACTIVE
类型Book
标题GaN Power Devices and Applications
作者Alex Lidow
出版商J.Wiley
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