86-13826519287‬

M5C-1500-595-RD-WT

  •  M5C-1500-595-RD-WT
  • image of 标签、贴纸、贴花 - 预印 M5C-1500-595-RD-WT
M5C-1500-595-RD-WT
标签、贴纸、贴花 - 预印
Brady Corporation
VINYL LBLS 1.5X
-
盒子
132
1
: 132

1

$88.6400

$88.6400

10

$82.7300

$827.3000

25

$79.7800

$1,994.5000

50

$78.6000

$3,930.0000

100

$76.8200

$7,682.0000

获取报价信息
M5C03N0
京微雅格-CME
FPGA
M5C03N3
京微雅格-CME
FPGA
M5C06N0
京微雅格-CME
FPGA
M5C06N3
京微雅格-CME
FPGA
M5C06N31
京微齐力-HME
FPGA
M5CO6N0
京微齐力-HME
FPGA
M5C06N3L144
京微齐力-HME
CPLD/FPGA芯片
CBC34123-M5C
Cymbet
SPI Real-Time Clock/Calendar with Integrated Backup Power
CBC34813-M5C
Cymbet
SPI Real-Time Clock/Calendar with Integrated Backup Power
UFT7260SM5C
微芯-Microchip
DIODE MODULE 600V 35A
IQE065N10NM5CGSC
英飞凌-Infineon
OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
IQE030N06NM5CGSC
英飞凌-Infineon
OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
IQE050N08NM5CG
英飞凌-Infineon
OptiMOS 5 Power-Transistor,80V MOSFET
DF2S5M5CT
东芝-Toshiba
ESD protection diode (uni-directional type)
DF2S6M5CT
东芝-Toshiba
ESD protection diode (uni-directional type)
IQE046N08LM5CG
英飞凌-Infineon
OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package
IQE220N15NM5CG
英飞凌-Infineon
OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package
DF2B5M5CT
东芝-Toshiba
ESD protection diode (bi-directional type)
MIMX8MM5CVTKZAA
恩智浦-NXP
i.MX 8M Mini Family - Arm® Cortex®-A53, Cortex-M4, Audio, Voice, Video
IQE008N03LM5CG
英飞凌-Infineon
OptiMOS 5 Power-Transistor,30V MOSFET
IQE030N06NM5CG
英飞凌-Infineon
OptiMOS 5 Power-Transistor,60V MOSFET
IQDH88N06LM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
IQD009N06NM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
DF2B6M5CT
东芝-Toshiba
ESD protection diode (bi-directional type)
IQD020N10NM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 100 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
IQE008N03LM5CGSC
英飞凌-Infineon
OptiMOS™ low-voltage power MOSFET 30 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
FTM5CU56A
意法-ST
OLED触控面板的电容式多点触摸屏控制器
IQE065N10NM5CG
英飞凌-Infineon
OptiMOS 5 Power-Transistor,100V MOSFET
AIM5C05B060N1
万代-AOS
IPM5
IQE022N06LM5CGSC
英飞凌-Infineon
OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
IQE050N08NM5CGSC
英飞凌-Infineon
OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
IQE022N06LM5CG
英飞凌-Infineon
OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package
IQE006NE2LM5CGSC
英飞凌-Infineon
OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance
IQD063N15NM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 150 V in PQFN 5x6 mm2 Source-Down package with industry-leading RDS(on) .
AIM5C10B060M3
万代-AOS
Intelligent Power Modules
IQE006NE2LM5CG
英飞凌-Infineon
采用PQFN 3.3x3.3源极底置封装的OptiMOS™ 25V低压功率MOSFET具有业界领先的RDS(on)。
IQD016N08NM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 80 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on)
MIMX8QM5CVUFFAB
恩智浦-NXP
i.MX 8系列 – Arm® Cortex®-A53,Cortex-A72,虚拟化,视觉,3D图形,4K视频
IQDH35N03LM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) .
IQE046N08LM5CGSC
英飞凌-Infineon
OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
IQDH29NE2LM5CG
英飞凌-Infineon
OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) .
S3M2M5C_SIM/eSIM
三星-Samsung
用户身份模块/嵌入式用户身份模块
PM5C3BA
尼克森-NIKO-SEM
MOSFET
S3M2M5C_eSE
三星-Samsung
嵌入式安全元件
KM5C7001DM-B622
三星-Samsung
多制层封装芯片
N548M5CB
DYNASTREAM
ANT SoC Module
IQD009N06NM5CGSC
英飞凌-Infineon
N-Channel Power MOSFET
IQE220N15NM5CGSC
英飞凌-Infineon
OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package
IQDH35N03LM5CGSC
英飞凌-Infineon
N-Channel Power MOSFET
DSL-1208G1M5C25KM0
西克-SICK
光学传感器
产品参数
PDF(1)
类型描述
制造商Brady Corporation
系列Brady®
包装盒子
产品状态ACTIVE
特征Chemical Resistant, Oil Resistant, Water Resistant
安装类型Adhesive
形状Rectangle
材质 - 主体Polyester
应用领域General
颜色 - 背景White
地点Outdoor
语言English
应用细节Alpha/Numeric
安排Text Only
图例(仅限符号)No Symbol
颜色 - 图例Black
打印类型Pre-Printed
关闭
询价
captcha

86-13826519287‬

点击这里给我发消息
0